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CVD, Incorporated Patents
Assignee:
CVD, Incorporated
Address:
Woburn, MA
No. of patents:
27
Patents:












Patent Number Title Of Patent Date Issued
6464912 Method for producing near-net shape free standing articles by chemical vapor deposition October 15, 2002
Near net shape free standing articles can be produced by chemical vapor deposition techniques when a suitable substrate is suspended in a chemical vapor deposition zone according to the disclosed technique. By suspending such substrates from linear suspension supports such as ropes, cabl
5741445 Method of making lightweight closed-back mirror April 21, 1998
A method of forming a light weight, closed-back mirror. The mirror is formed as a monolithic construction by the use of chemical vapor deposition techniques. A first deposition forms sheets of the material, which are machined to the proper size to form reinforcing ribs. A sacrificial
5683028 Bonding of silicon carbide components November 4, 1997
A method of bonding a first silicon carbide part to a second silicon carbide part is provided. The first silicon carbide part provides a receiving female joint member and the second silicon carbide part provides an insertion male joint member. The male and female members each have fa
5654034 Composite thermocouple protection tubes August 5, 1997
A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic
5618594 Composite thermocouple protection tubes April 8, 1997
A semiconductor protection tube is a ceramic tube with a layer of silicon carbide covering at least a portion of the tube adjacent an open front end of the tube and extending forward of the open end to form a hollow, closed-end tip. The protection tube is formed by providing the ceramic
5612132 Chemical vapor deposition-produced silicon carbide having improved properties March 18, 1997
.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios o
5604151 Chemical vapor deposition-produced silicon carbide having improved properties February 18, 1997
.beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios o
5584936 Susceptor for semiconductor wafer processing December 17, 1996
A susceptor for rapid thermal processing for epitaxial deposition upon semiconductor wafers. The susceptor includes an outer supporting ring upon which the wafer rests. This outer ring is preferably formed of a monolithic mass of silicon carbide, and most preferably high purity .beta
5502227 Liquid indium source March 26, 1996
A uniform dosimetry of vapor phase trimethylindium is provided by dissolving trimethylindium in a C.sub.3 -C.sub.5 trialkylindium and bubbling an inert carrier gas through the solution.
5474613 Chemical vapor deposition furnace and furnace apparatus December 12, 1995
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas
5465184 Hard disc drives and read/write heads formed from highly thermally conductive silicon carbide November 7, 1995
Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas
5354580 Triangular deposition chamber for a vapor deposition system October 11, 1994
A process and apparatus for the manufacture of chemical vapor deposited silicon carbide which comprises conveying the reaction gases to a triangular chemical vapor deposition cell where material is deposited by chemical vapor deposition. The triangular cell provides a large surface a
5350869 Purification of trialkylgallium, synthesis of trialkylgallium September 27, 1994
Trialkylgallium is purified of group II B p-type impurities, particularly Zn, Hg, and Cd, by contacting the trialkylgallium with a metallic gallium-containing melt. Also, trialkylgallium can be produced by contacting a dialkyl group II B compound with a metallic gallium-containing me
5150507 Method of fabricating lightweight honeycomb structures September 29, 1992
A process is disclosed for fabricating lightweight honeycomb type structures out of material such as silicon carbide (SiC) and silicon (S). The lightweight structure consists of a core to define the shape and size of the structure. The core is coated with an appropriate deposit such as
5120676 Use of phosphine and arsine compounds in chemical vapor deposition and chemical doping June 9, 1992
A MOCVD process for depositing an arsenic-containing film or a phosphorous-containing film utilizing a diprimary phosphine or arsine or an unsaturated hydrocarbon phosphine or arsine.
5102694 Pulsed chemical vapor deposition of gradient index optical material April 7, 1992
Periodic pulsing of the gaseous reactant flows during chemical vapor deposition of gradient index optical material markedly improves the refractive index homogeneity of the deposit with the frequency of the pulsing being variable over a wide range but the number and size of the inhom
5071596 Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process December 10, 1991
A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate,
5068372 Method for the synthesis of primary arsines November 26, 1991
Disclosed is a method for producing, from an aqueous basic composition, a primary arsine having one hydrocarbyl group bonded directly to As, the basic composition having been obtained from the combination of components comprising an alkali metal arsenite and a reactive hydrocarbyl halide
4999223 Chemical vapor deposition and chemicals with diarsines and polyarsines March 12, 1991
A MOCVD process for depositing an arsenic-containing film utilizes an organoarsine compound having at least one As-As bond, in particular, diarsines and compounds having arsenic rings of 5 or 6 arsenic atoms.
4997678 Chemical vapor deposition process to replicate the finish and figure of preshaped structures March 5, 1991
A process is disclosed by which the finish and figure of polished preshaped structures (such as mirrors) can be replicated directly by chemical vapor deposition, with only minor polishing of the replica being required to obtain a final product, and with the original substrate being reusa
4990374 Selective area chemical vapor deposition February 5, 1991
A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor depositi
4978577 Method for preparing laminates of ZnSe and ZnS December 18, 1990
An improved method of forming a ZnS layer on a ZnSe substrate by chemical vapor deposition of ZnS onto the ZnSe is disclosed in which the ZnS is contacted, prior to the chemical vapor deposition of the ZnS, with H.sub.2 S in the absence of zinc metal vapor to cause reaction of the H.sub.
4963393 Method to prevent backside growth on substrates in a vapor deposition system October 16, 1990
Backside growth on substrates in a vapor deposition system has been a problem resulting in cracking of the material deposited on the substrate, making replication in a vapor deposition system difficult to achieve, and requiring post deposition machining to separate the substrate-deposit
4942252 Synthesis of phosphorus and arsenic, halides and hydrides July 17, 1990
Method for synthesizing alkyl halides of phosphorus, arsenic, or antimony from the corresponding phosphorus, arsenic, or antimony alkyl and phosphorus, arsenic, or antimony halide. An improved synthesis of alkyl phosphorus or arsenic hydrides from the corresponding alkyl phosphorus,
4924019 Synthesis of high purity dimethylaluminum hydride May 8, 1990
The waste product from the synthesis of trimethylgallium is reacted with a hydride selected from an alkali metal hydride, a group IIIA hydride, or a group III hydride to produce dimethylaluminum hydride of high purity.
4900855 Chemical process for obtaining high purification of monoalkylarsines and dialkylarsines and puri February 13, 1990
A method is provided for highly pure mono- and dialkylarsines, particularly removing substantially all silicon-containing impurities. A mono- or dialkylarsine is reacted with either an alkali metal or an alkali metal hydrocarbyl, thereby producing an alkali metal alkylarsenide. Silicon,
4897500 Method of deactivating residues of the production of dimethylaluminum hydride and dimethylgalliu January 30, 1990
Waste material containing substantial amounts of Li(MH.sub.3 R) compounds where M is Al or Ga are deactivated by dissolving and/or dispersing the waste material in a solvent in which ionic deactivation products are soluble and then adding a carbonyl-containing compound which reacts with

 
 
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