| Patent Number |
Title Of Patent |
Date Issued |
| RE36623 |
Process for PECVD of silicon oxide using TEOS decomposition |
March 21, 2000 |
| A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-sit |
| D592601 |
Inkjet printer cable |
May 19, 2009 |
|
| D568914 |
Substrate support lift pin |
May 13, 2008 |
|
| D450070 |
Sputtering chamber coil |
November 6, 2001 |
|
| D446506 |
Monolith processing system platform |
August 14, 2001 |
|
| D445779 |
Cassette loading device |
July 31, 2001 |
|
| D442853 |
Rounded overlap coil |
May 29, 2001 |
|
| D442852 |
Squared overlap coil |
May 29, 2001 |
|
| D441348 |
Process chamber lid |
May 1, 2001 |
|
| D440582 |
Sputtering chamber coil |
April 17, 2001 |
|
| D437333 |
Process chamber tray |
February 6, 2001 |
|
| D436609 |
Transfer chamber |
January 23, 2001 |
|
| D425919 |
Electrostatic chuck with improved spacing mask and workpiece detection device |
May 30, 2000 |
|
| D420023 |
Electrostatic chuck with improved spacing mask and workpiece detection device |
February 1, 2000 |
|
| D420022 |
Electrostatic chuck with improved spacing and charge migration reduction mask |
February 1, 2000 |
|
| D407073 |
Electrostatic chuck with improved spacing and charge migration reduction mask |
March 23, 1999 |
|
| D406852 |
Electrostatic chuck with improved spacing mask and workpiece detection device |
March 16, 1999 |
|
| D403337 |
High conductance low wall deposition upper shield |
December 29, 1998 |
|
| D400511 |
Magnet structure for a conical target |
November 3, 1998 |
|
| 7620511 |
Method for determining plasma characteristics |
November 17, 2009 |
| Methods for determining characteristics of a plasma are provided. In one embodiment, a method for determining characteristics of a plasma includes obtaining metrics of current and voltage information for first and second waveforms coupled to a plasma at different frequencies, determining |
| 7618893 |
Methods of forming a layer for barrier applications in an interconnect structure |
November 17, 2009 |
| Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed |
| 7618889 |
Dual damascene fabrication with low k materials |
November 17, 2009 |
| The invention provides methods and apparatuses for fabricating a dual damascene structure on a substrate. First, trench lithography and trench patterning are performed on the surface of a substrate to etch a low-k dielectric material layer to a desired etch depth to form a trench prior |
| 7618769 |
Textured chamber surface |
November 17, 2009 |
| A method of fabricating a process chamber component having a textured surface includes applying a resist layer on an underlying surface of the component. A predetermined pattern of apertures is formed in the resist layer that exposes the underlying surface of the component. The under |
| 7618548 |
Silicon-containing structure with deep etched features, and method of manufacture |
November 17, 2009 |
| We have developed an uncomplicated method of plasma etching deeply recessed features such as deep trenches, of at least 5 .mu.m in depth, in a silicon-containing substrate, in a manner which generates smooth sidewalls, having a roughness of less than about 1 .mu.m, typically less tha |
| 7618521 |
Split magnet ring on a magnetron sputter chamber |
November 17, 2009 |
| A split magnet ring, particularly useful in a magnetron plasma reactor sputter depositing tantalum or tungsten or other barrier metal into a via and also resputter etching the deposited material from the bottom of the via onto the via sidewalls. The magnet ring includes two annular magne |
| 7618516 |
Method and apparatus to confine plasma and to enhance flow conductance |
November 17, 2009 |
| The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a |
| 7615489 |
Method for forming metal interconnects and reducing metal seed layer overhang |
November 10, 2009 |
| A method for forming metal interconnects on a substrate is described. A substrate with a dielectric layer is positioned within a processing chamber. A first barrier layer is deposited on the dielectric layer and within a plurality of vias of the dielectric layer, wherein the first ba |
| 7615482 |
Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop laye |
November 10, 2009 |
| Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide |
| 7614939 |
Chemical mechanical polishing system having multiple polishing stations and providing relative l |
November 10, 2009 |
| A chemical-mechanical polishing apparatus including a table top, a transfer station mounted on the table top, a plurality of polishing stations mounted on the table top, a plurality of washing stations, and a plurality of carrier heads supported by a support member rotatable about an |
| 7614936 |
Spectrum based endpointing for chemical mechanical polishing |
November 10, 2009 |
| Methods and apparatus for providing a flushing system for flushing a top surface of an optical head. The flushing system includes a source of gas configured to provide a flow of gas, a delivery nozzle, a delivery line that connects the source of gas to the delivery nozzle, a vacuum sourc |
| 7614933 |
Polishing pad assembly with glass or crystalline window |
November 10, 2009 |
| Methods and apparatus for providing a chemical mechanical polishing pad. The pad includes a polishing layer having a top surface and a bottom surface. The pad includes an aperture having a first opening in the top surface and a second opening in the bottom surface. The top surface is a |
| 7612491 |
Lamp for rapid thermal processing chamber |
November 3, 2009 |
| A lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100.degree. C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair |
| 7611996 |
Multi-stage curing of low K nano-porous films |
November 3, 2009 |
| Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of p |
| 7611990 |
Deposition methods for barrier and tungsten materials |
November 3, 2009 |
| Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt sil |
| 7611976 |
Gate electrode dopant activation method for semiconductor manufacturing |
November 3, 2009 |
| Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped |
| 7611975 |
Method of implanting a substrate and an ion implanter for performing the method |
November 3, 2009 |
| An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast s |
| 7611400 |
Smart conditioner rinse station |
November 3, 2009 |
| A method and apparatus for monitoring polishing pad conditioning mechanisms is provided. In one embodiment, a semiconductor substrate polishing system includes a rinse station, a polishing surface, a conditioning element, and a conditioning mechanism. The conditioning mechanism selec |
| 7611319 |
Methods and apparatus for identifying small lot size substrate carriers |
November 3, 2009 |
| In at least one aspect, a system is provided that includes (1) a substrate carrier having first docking features; and (2) a loadport having second docking features. The second docking features are adapted to block docking of substrate carriers that do not include the first docking fe |
| 7611318 |
Overhead transfer flange and support for suspending a substrate carrier |
November 3, 2009 |
| In a first aspect, a first apparatus is provided for use in supporting a substrate carrier. The first apparatus includes an overhead transfer flange adapted to couple to a substrate carrier body and an overhead carrier support. The overhead transfer flange has a first side and a seco |
| 7611217 |
Methods and systems for inkjet drop positioning |
November 3, 2009 |
| Methods and apparatus for inkjet inkjet drop positioning are provided. A first method includes determining an intended deposition location of an ink drop on a substrate, depositing the ink drop on the substrate using an inkjet printing system, detecting a deposited location of the de |
| 7608300 |
Methods and devices to reduce defects in dielectric stack structures |
October 27, 2009 |
| A variety of techniques may be employed alone or in combination to reduce the incidence of defects arising in dielectric stack structures formed by chemical vapor deposition (CVD). Incidence of a first defect type attributable to reaction between an unreacted species of a prior CVD step |
| 7608173 |
Biased retaining ring |
October 27, 2009 |
| A retaining ring for electrochemical mechanical processing is described. The ring has a conductive portion having an upper surface and a lower surface and an insulating portion. The insulating portion has one or more openings extending therethrough, exposing the lower surface of the |
| 7607881 |
Compact apparatus and method for storing and loading semiconductor wafer carriers |
October 27, 2009 |
| An improved apparatus and method is provided for storing semiconductor wafer carriers, and for loading wafers or wafer carriers to a fabrication tool. The apparatus preferably provides an elevated port for receipt of wafer carriers from an overhead factory transport, allows for local |
| 7605083 |
Formation of composite tungsten films |
October 20, 2009 |
| Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subse |
| 7605008 |
Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled |
October 20, 2009 |
| A method and apparatus for igniting a gas mixture into plasma using capacitive coupling techniques, shielding the plasma and other contents of the plasma reactor from the capacitively-coupled electric field, and maintaining the plasma using inductive coupling are provided. For some e |
| 7604708 |
Cleaning of native oxide with hydrogen-containing radicals |
October 20, 2009 |
| A substrate cleaning apparatus has a remote source to remotely energize a hydrogen-containing gas to form an energized gas having a first ratio of ionic hydrogen-containing species to radical hydrogen-containing species. The apparatus has a process chamber with a substrate support, an io |
| 7603196 |
Methods and apparatus for material control system interface |
October 13, 2009 |
| Methods and apparatus are provided for managing movement of small lots between processing tools within an electronic device manufacturing facility. In some embodiments, a number of priority lots to be processed is determined and an equivalent number of carrier storage locations are r |
| 7603195 |
Methods and apparatus for integrating large and small lot electronic device fabrication faciliti |
October 13, 2009 |
| In at least one aspect, the invention provides an electronic device fabrication facility (Fab) that uses small lot carriers that may be transparently integrated into an existing Fab that uses large lot carriers. A manufacturing execution system (MES) may interact with the inventive s |
| 7602484 |
Method and apparatus for performing limited area spectral analysis |
October 13, 2009 |
| A method and apparatus for obtaining in-situ data of a substrate in a semiconductor substrate processing chamber is provided. The apparatus includes an optics assembly for acquiring data regarding a substrate and an actuator assembly adapted to laterally move the optics assembly in two |
| 7602199 |
Mini-prober for TFT-LCD testing |
October 13, 2009 |
| An apparatus and method for testing large area substrates is described. The large area substrates include patterns of displays and contact points electrically coupled to the displays. The apparatus includes a prober assembly that is movable relative to the large area substrate and may be |
