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Amazing Microelectronic Corp. Patents
Assignee:
Amazing Microelectronic Corp.
Address:
Taipei County, TW
No. of patents:
23
Patents:












Patent Number Title Of Patent Date Issued
8237193 Lateral transient voltage suppressor for low-voltage applications August 7, 2012
A lateral transient voltage suppressor for low-voltage applications. The suppressor includes an N-type heavily doped substrate and at least two clamp diode structures horizontally arranged in the N-type heavily doped substrate. Each clamp diode structure further includes a clamp well
8232601 Transient voltage suppressors July 31, 2012
The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having
8217462 Transient voltage suppressors July 10, 2012
The present invention relates a transient voltage suppressor (TVS) for directional ESD protection. The TVS includes: a conductivity type substrate; a first type lightly doped region, having a first type heavily doped region arranged therein; a second type lightly doped region, having
8217421 ESD protection device with vertical transistor structure July 10, 2012
A new ESD protection device with an integrated-circuit vertical transistor structure is disclosed, which includes a heavily doped p-type substrate (P.sup.+ substrate), a n-type well (N well) in the P.sup.+ substrate, a heavily doped p-type diffusion (P.sup.+ diffusion) in the N well,
8169000 Lateral transient voltage suppressor with ultra low capacitance May 1, 2012
A lateral transient voltage suppressor with ultra low capacitance is disclosed. The suppressor comprises a first conductivity type substrate and at least one diode cascade structure arranged in the first conductivity type substrate. The cascade structure further comprises at least on
8116049 Transient voltage detection circuit February 14, 2012
The invention discloses a transient voltage detection circuit suitable for an electronic system. The electronic system includes a high voltage line and a low voltage line. The transient voltage detection circuit includes at least one detection circuit and a judge module. Each detecti
8067952 System-level ESD detection circuit November 29, 2011
An ESD detection circuit for detecting a level of an ESD voltage on a power rail is provided. The ESD detection circuit includes a resistive component, a diode unit, and a controller. The resistive component is coupled between a detection node and a ground node corresponding to the p
8049247 Asymmetric bidirectional silicon-controlled rectifier November 1, 2011
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitax
7989923 Bi-directional transient voltage suppression device and forming method thereof August 2, 2011
A bidirectional transient voltage suppression device is disclosed. The bi-directional transient voltage suppression device comprises a semiconductor die. The semiconductor die has a multi-layer structure comprising a semiconductor substrate of a first conductivity type, a buried laye
7974053 ESD protection circuit for differential I/O pair July 5, 2011
An ESD protection circuit for a differential I/O pair is provided. The circuit includes an ESD detection circuit, a discharge device, and four diodes. The first diode is coupled between the first I/O pin and the discharge device in a forward direction toward the discharge device. The
7944315 Programmable voltage-controlled oscillator May 17, 2011
The invention discloses a programmable voltage-controlled oscillator. The programmable voltage-controlled oscillator has an output frequency. The programmable voltage-controlled oscillator includes a control unit, a current selector, a current mirror unit, an oscillator module, and a
7944297 Class D amplifier May 17, 2011
A class D amplifier including a PWM circuit, a buffer amplifying circuit, a low-pass filter, and two current sources is provided. The PWM circuit transfers an analog signal into a PWM signal. The buffer amplifying circuit amplifies the PWM signal and generates an amplified signal. The
7915955 Bias balancing circuit March 29, 2011
The invention discloses a bias balancing circuit. The bias balancing circuit is used for balancing an output voltage outputted by an amplifier module. The amplifier module has a variable gain. The bias balancing circuit comprises a comparator and a voltage selector. The comparator is
7915638 Symmetric bidirectional silicon-controlled rectifier March 29, 2011
The present invention discloses a symmetric bidirectional silicon-controlled rectifier, which comprises: a substrate; a buried layer formed on the substrate; a first well, a middle region and a second well, which are sequentially formed on the buried layer side-by-side; a first semic
7889470 ESD protection circuit with active triggering February 15, 2011
An ESD protection circuit is provided. The circuit includes a discharging component, a diode, and an ESD detection circuit. The discharging component is coupled between an input/output pad and a first power line of an IC. The diode is coupled between the input/output pad and a second
7855597 Class-D amplifier December 21, 2010
The invention discloses a class-D amplifier, which is used for driving a two-terminal load according to a set of analog signals. The D-class amplifier includes a pulse-width modulation (PWM) circuit, a signal processing circuit and a driving amplifier circuit. The PWM circuit receive
7852156 Class-D power amplifier having distortion-suppressing function December 14, 2010
A Class-D power amplifier having a distortion-suppressing function includes a gain control unit, a first PWM unit, a second PWM unit, a current control unit, and a level control unit. The level control unit includes at least one D flip-flop and at least one XNOR gate. The D flip-flop
7817390 Power-rail ESD protection circuit with ultra low gate leakage October 19, 2010
An ESD protection circuit including a clamping module and a detecting module is provided. The clamping module is coupled between a positive power line and a negative power line. The detecting module includes a triggering unit, a resistor, and a MOS capacitor. An output terminal of th
7786504 Bidirectional PNPN silicon-controlled rectifier August 31, 2010
The present invention discloses a bidirectional PNPN silicon-controlled rectifier comprising: a p-type substrate; a N-type epitaxial layer; a P-type well and two N-type wells all formed inside the N-type epitaxial layer with the two N-type wells respectively arranged at two sides of the
7755871 Power-rail ESD protection circuit with ultra low gate leakage July 13, 2010
An ESD protection circuit including a clamping module and a detecting module is provided. The clamping module is coupled between a positive power line and a negative power line. The detecting module includes a triggering unit, a resistor, and a MOS capacitor. An output terminal of th
7656627 ESD protection circuit with active triggering February 2, 2010
An ESD protection circuit is provided. The circuit includes a discharging component, a diode, and an ESD detection circuit. The discharging component is coupled between an input/output pad and a first power line of an IC. The diode is coupled between the input/output pad and a second
7652511 Slew-rate control circuitry with output buffer and feedback January 26, 2010
The present invention proposed a slew-rate control circuitry without the use of external components such as amplifiers. Therefore slew-rate control circuitry of the present invention not only provides an IC with build-in slew-rate control, but also reduces number of transistors used
7598797 Charge pump circuit with bipolar output October 6, 2009
A charge pump circuit with bipolar output comprises a first set of switch device capable of selectively connecting two terminals of a first transfer capacitor to a voltage source and a ground terminal, respectively, a second set of switch device capable of selectively connecting the

 
 
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