| Patent Number |
Title Of Patent |
Date Issued |
| D545393 |
Rectangular parallelepiped fluid storage and dispensing vessel |
June 26, 2007 |
|
| 7614421 |
Pressure-based gas delivery system and method for reducing risks associated with storage and del |
November 10, 2009 |
| Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the |
| 7605113 |
Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorgan |
October 20, 2009 |
| A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are use |
| 7605093 |
Method of fabricating iridium-based materials and structures on substrates, and iridium source r |
October 20, 2009 |
| A method of forming an iridium-containing film on a substrate, from an iridium-containing precursor thereof which is decomposable to deposit iridium on the substrate, by decomposing the precursor and depositing iridium on the substrate in an oxidizing ambient environment which may fo |
| 7601860 |
Composition and method for low temperature chemical vapor deposition of silicon-containing films |
October 13, 2009 |
| Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si.sub.3N.sub.4), and a method of depositing the silicon precursors on substrates using low |
| 7579496 |
Monosilane or disilane derivatives and method for low temperature deposition of silicon-containi |
August 25, 2009 |
| This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550.degree. C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least |
| 7557073 |
Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist |
July 7, 2009 |
| A method and composition for removing ion-implanted photoresist from semiconductor substrates having such photoresist is described. The removal composition contains supercritical CO.sub.2 (SCCO.sub.2), a co-solvent and a reducing agent for use in removing ion-implanted photoresist. S |
| 7556244 |
Method and apparatus to help promote contact of gas with vaporized material |
July 7, 2009 |
| Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vess |
| 7553803 |
Enhancement of silicon-containing particulate material removal using supercritical fluid-based c |
June 30, 2009 |
| A method and composition for removing silicon-containing particulate material, such as silicon nitrides and silicon oxides, from patterned Si/SiO.sub.2 semiconductor wafer surfaces is described. The composition includes a supercritical fluid (SCF), an etchant species, a co-solvent, a |
| 7534752 |
Post plasma ashing wafer cleaning formulation |
May 19, 2009 |
| A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic c |
| 7531679 |
Composition and method for low temperature deposition of silicon-containing films such as films |
May 12, 2009 |
| Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si.sub.3N.sub.4), siliconoxynitride |
| 7531031 |
Copper (I) compounds useful as deposition precursors of copper thin films |
May 12, 2009 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7517809 |
Removal of MEMS sacrificial layers using supercritical fluid/chemical formulations |
April 14, 2009 |
| A method and composition for removing silicon-containing sacrificial layers from Micro Electro Mechanical System (MEMS) and other semiconductor substrates having such sacrificial layers is described. The etching compositions include a supercritical fluid (SCF), an etchant species, a |
| 7501010 |
Rectangular parallelepiped fluid storage and dispending vessel |
March 10, 2009 |
| A fluid storage and dispensing apparatus including a fluid storage and dispensing vessel having a rectangular parallelepiped shape, and an integrated gas cabinet assembly including such fluid storage and dispensing apparatus and/or a point-of-use ventilation gas scrubber in the vente |
| 7494530 |
Gas storage and dispensing system with monolithic carbon adsorbent |
February 24, 2009 |
| A fluid storage and dispensing apparatus, including a cylindrical fluid storage and dispensing vessel having an interior volume, in which the interior volume contains a physical adsorbent for sorptively retaining a fluid thereon and from which the fluid is desorbable for dispensing from |
| 7487956 |
Method and apparatus to help promote contact of gas with vaporized material |
February 10, 2009 |
| Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vess |
| 7485611 |
Supercritical fluid-based cleaning compositions and methods |
February 3, 2009 |
| Compositions and methods employing supercritical fluids, e.g., supercritical carbon dioxide, for removal of unwanted material from microelectronic device structures and process equipment. One composition of such type, having utility for removing flux and solder perform surface films, |
| 7485169 |
Semiconductor manufacturing facility utilizing exhaust recirculation |
February 3, 2009 |
| A semiconductor manufacturing process facility requiring use therein of air exhaust for its operation, such facility including clean room and gray room components, with the clean room having at least one semiconductor manufacturing tool therein, and wherein air exhaust is flowed thro |
| 7475588 |
Apparatus and process for sensing fluoro species in semiconductor processing systems |
January 13, 2009 |
| A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF.sub.3, etc. The detector in a preferred structural arrangement employs a microelectromechanical syste |
| 7456488 |
Porogen material |
November 25, 2008 |
| A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film a |
| 7455719 |
Gas storage and dispensing system with monolithic carbon adsorbent |
November 25, 2008 |
| A fluid storage and dispensing apparatus, including a fluid storage and dispensing vessel having an interior volume, in which the interior volume contains a physical adsorbent sorptively retaining a fluid thereon and from which the fluid is desorbable for dispensing from the vessel, and |
| 7446217 |
Composition and method for low temperature deposition of silicon-containing films |
November 4, 2008 |
| This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300.degree. C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least |
| 7439318 |
Method for trace water analysis in cyclic siloxanes useful as precursors for low dielectric cons |
October 21, 2008 |
| An analytical technique for the accurate and precise measurement of trace water in chemical reagents, comprising the steps of combining a chemical reagent comprising .ltoreq.5 ppm water, with hexafluoroacetone (HFA), to form a sample mixture comprising at least the chemical reagent and a |
| 7437060 |
Delivery systems for efficient vaporization of precursor source material |
October 14, 2008 |
| A delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebe |
| 7435320 |
Methods and apparatuses for monitoring organic additives in electrochemical deposition solutions |
October 14, 2008 |
| The present invention relates in general to real-time analysis of electrochemical deposition (ECD) metal plating solutions, for the purpose of reducing plating defects and achieving high quality metal deposition. The present invention provides various new electrochemical analytical c |
| 7431494 |
Flexible mixing bag for mixing solids, liquids, and gases |
October 7, 2008 |
| In an embodiment, an apparatus includes a disposable and flexible mixing tank, configurable as a bag, having a sealed sleeve therein for arrangement of a mixing device. The volume of the mixing tank is defined by an inner wall of the mixing tank and an inner wall of the sleeve. The m |
| 7427567 |
Polishing slurries for copper and associated materials |
September 23, 2008 |
| A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry |
| 7427346 |
Electrochemical drive circuitry and method |
September 23, 2008 |
| An electrochemical drive circuitry and method, such as may be employed in electroplating bath chemical monitoring. A microcontroller can be utilized to selectively apply galvanostatic or potentiostatic conditions on the electrochemical cell, for measurement of response of the electro |
| 7427344 |
Methods for determining organic component concentrations in an electrolytic solution |
September 23, 2008 |
| The present invention relates to a method and apparatus for determining organic additive concentrations in a sample electrolytic solution, preferably a copper electroplating solution, by measuring the double layer capacitance of a measuring electrode in such sample solution. Specific |
| 7423166 |
Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films |
September 9, 2008 |
| A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of |
| 7406979 |
Gas delivery system with integrated valve manifold functionality for sub-atmospheric and super-a |
August 5, 2008 |
| A gas cabinet including an enclosure containing at least one gas supply vessel and flow circuitry coupled to the gas supply vessel(s). The flow circuitry is constructed and arranged to flow dispensed gas from an on-stream gas supply vessel to multiple sticks of the flow circuitry, wi |
| 7390321 |
Connection having laminar flow for the delivery of a substance |
June 24, 2008 |
| In one embodiment, a method includes puncturing, with a piercing element of a hollow connector, an opening of a membrane that encloses the hollow connector in a gas that is essentially sterile. The puncturing of the opening of the membrane generates a laminar flow of the gas along sides |
| 7373257 |
Photometrically modulated delivery of reagents |
May 13, 2008 |
| A process system adapted for processing of or with a material therein. The process system includes: a sampling region for the material; an infrared photometric monitor constructed and arranged to transmit infrared radiation through the sampling region and to responsively generate an |
| 7371880 |
Copper (I) compounds useful as deposition precursors of copper thin films |
May 13, 2008 |
| Copper (I) amidinate precursors for forming copper thin films in the manufacture of semiconductor devices, and a method of depositing the copper (I) amidinate precursors on substrates using chemical vapor deposition or atomic layer deposition processes. |
| 7371878 |
Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
May 13, 2008 |
| Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device str |
| 7370791 |
Manufacturing system with intrinsically safe electric information storage |
May 13, 2008 |
| The present invention is a manufacturing system including a hazard zone and a non-hazard zone. The system includes a storage device, located in the hazard zone, for electrically storing information. The system further includes a communication device, also located in the hazard zone, for |
| 7370661 |
Permeable gas assembly for gas delivery |
May 13, 2008 |
| A valve assembly for controlling gas delivery from a higher pressure fluid source to a lower pressure processing tool. The valve assembly includes a valve poppet movingly engageable with a valve seating member and a fluid permeable insert positioned between the valve poppet and the valve |
| 7361603 |
Passivative chemical mechanical polishing composition for copper film planarization |
April 22, 2008 |
| A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent and a method of use. Such CMP composition may be diluted during the CMP polish to minimize the occurrence of dishing or other adverse planarization deficien |
| 7351976 |
Monitoring system comprising infrared thermopile detector |
April 1, 2008 |
| The present invention relates to a semiconductor processing system that employs infrared-based thermopile detector for process control, by analyzing a material of interest, based on absorption of infrared light at a characteristic wavelength by such material. Specifically, an infrare |
| 7344589 |
Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectr |
March 18, 2008 |
| A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable |
| 7342295 |
Porogen material |
March 11, 2008 |
| A porogen material for forming a dielectric porous film. The porogen material may include a silicon based dielectric precursor and a silicon containing porogen. The porous film may have a substantially uniform dielectric constant value throughout. Methods of forming the porous film a |
| 7335721 |
Polytetrafluoroethylene treatment |
February 26, 2008 |
| One or more PTFE films are heated to greater than 150 degrees centigrade (C) and for a time greater than 20 hours, then the PTFE films are cooled. The PTFE films may be heated to temperatures greater than 200.degree. C. and less than 250.degree. C. and most preferably heated to a tempera |
| 7335239 |
Chemical mechanical planarization pad |
February 26, 2008 |
| A Chemical Mechanical Planarization (CMP) Pad. The CMP pad may be hydrophobic due to the incorporation of metal complexing agents. The CMP pad substantially retaining planarazation characteristics throughout planarization applications. Shearing, hardness, wearing, water absorbtion an |
| 7329768 |
Chemical vapor deposition precursors for deposition of tantalum-based materials |
February 12, 2008 |
| Tantalum precursors suitable for chemical vapor deposition of tantalum-containing material, e.g., tantalum, TaN, TaSiN, etc., on substrates. The tantalum precursors are substituted cyclopentadienyl tantalum compounds. In one aspect of the invention, such compounds are silylated to co |
| 7328716 |
Pressure-based gas delivery system and method for reducing risks associated with storage and del |
February 12, 2008 |
| Apparatus and method for dispensing a gas using a gas source coupled in selective flow relationship with a gas manifold. The gas manifold includes flow circuitry for discharging gas to a gas-using zone, and the gas source includes a pressure-regulated gas source vessel containing the |
| 7326673 |
Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
February 5, 2008 |
| Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include |
| 7325560 |
In-situ gas blending and dilution system for delivery of dilute gas at a predetermined concentra |
February 5, 2008 |
| Apparatus and method for delivery of dilute active fluid, e.g., to a downstream active fluid-consuming process unit of a semiconductor manufacturing plant. The delivery system includes an active fluid source, a diluent fluid source, a fluid flow metering device for dispensing of the |
| 7323581 |
Source reagent compositions and method for forming metal films on a substrate by chemical vapor |
January 29, 2008 |
| A metalorganic complex composition comprising a metalorganic complex selected from the group consisting of: metalorganic complexes comprising one or more metal central atoms coordinated to one or more monodentate or multidentate organic ligands, and complexed with one or more complexing |
| 7316329 |
Returnable and reusable, bag-in-drum fluid storage and dispensing container system |
January 8, 2008 |
| A "bag-in-a-drum" container for storage and dispensing of fluids. The container is adapted to minimize volumetric space requirements in storage, transport and use of the container. The containers are usefully employed in a system of supplying liquid in containers to an end user marke |
| 7308991 |
Blown bottle with intrinsic liner |
December 18, 2007 |
| A container for holding and dispensing liquid having a container wall comprising a rigid portion that dimensionally defines the container, a liner portion disposed within the container adjacent to the rigid portion, and an adhesive layer disposed between the rigid portion and the lin |
