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ASM International N.V. Patents
Assignee:
ASM International N.V.
Address:
Almere, NL
No. of patents:
144
Patents:


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Patent Number Title Of Patent Date Issued
8242029 Method for forming a silicon dioxide/metal oxide-nanolaminate with a desired wet etch rate August 14, 2012
An atomic layer deposition-deposited silicon dioxide/metal oxide-nanolaminate, comprising at least one layer of silicon dioxide and at least one layer of a metal oxide, and having a wet etch rate in an etchant, said wet etch rate being either greater or smaller than both a wet etch r
8230807 Coatings, and methods and devices for the manufacture thereof July 31, 2012
The present invention describes a method for manufacturing a low dielectric constant coating, which coating comprises an inorganic and an organic component, wherein precursors for these components are activated in at least two plasma sources for plasma activated deposition of a chemi
8099190 Apparatus and method for transferring two or more wafers whereby the positions of the wafers can January 17, 2012
A method and an apparatus for transferring a substantially flat and substantially circular objects, such as wafers, from a pick-up position to a delivery position, the apparatus comprising, a manipulator, at least one source for emitting a source signal, at least one sensor for sensing
8048484 Method for the deposition of a film by CVD or ALD November 1, 2011
Methods and apparatus for deposition of a film on a substrate in a reaction chamber by an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process include providing one or more reactants, and providing a volatile neutral coordinating ligand capable of coordinating at
8025922 Enhanced deposition of noble metals September 27, 2011
The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. T
8002463 Method and device for determining the temperature of a substrate August 23, 2011
The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap
7971861 Safe liquid source containers July 5, 2011
Containers for providing vapor phase reactant from liquid sources include bubbler designs and designs in which carrier gas flows over the liquid surface. Among the bubbler arrangements, a bypass conductance is provided to release excess pressure from the gas volume inside the container,
7971734 Wafer boat July 5, 2011
Wafer boat for holding semiconductor wafers in a spaced vertical arrangement during processing, said wafer boat comprising a plurality of vertically spaced holding positions for receiving and supporting said wafers in a substantially horizontal orientation, wherein the holding positi
7923382 Method for forming roughened surface April 12, 2011
Methods of forming a roughened metal surface on a substrate are provided, along with structures comprising such roughened surfaces. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensi
7887101 Joint for connecting two tubes in a high-temperature environment February 15, 2011
A joint for connecting two tubes. The joint includes a first tube that provides a ball interface at its end. The joint also includes a second tube that provides a cup interface inside its wall. The cup interface of the second tube and the ball interface of the first tube form a cup-ball
7851019 Method for controlling the sublimation of reactants December 14, 2010
An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers,
7846499 Method of pulsing vapor precursors in an ALD reactor December 7, 2010
A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method. The method comprises vaporizing at least one precursor from a source material container maintained at a vaporising temperature, repeatedly fe
7833352 Apparatus for fabrication of thin films November 16, 2010
The invention relates to an apparatus for growing thin-films onto a substrate by exposing the substrate to alternate surface reactions of vapor-phase reactants for forming a thin-film onto the, substrate by means of said surface reactions. The apparatus comprises a vacuum vessel (1),
7824492 Method of growing oxide thin films November 2, 2010
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a sili
7799300 Method and apparatus for removing substances from gases September 21, 2010
The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the
7771534 Method of growing oxide thin films August 10, 2010
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporizable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a sili
7771533 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide August 10, 2010
Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a sili
7749871 Method for depositing nanolaminate thin films on sensitive surfaces July 6, 2010
The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the dep
7731494 System for use in a vertical furnace June 8, 2010
A system used in a vertical furnace is provided that includes a tube. The tube includes a tube flange at its lower end. The tube flange provides a first sealing surface at its lower end. Further, there is a structural member at the lower surface of the tube flange. This structural member
7713584 Process for producing oxide films May 11, 2010
Processes are provided for producing bismuth-containing oxide thin films by atomic layer deposition. In preferred embodiments an organic bismuth compound having at least one monodentate alkoxide ligand is used as a bismuth source material. Bismuth-containing oxide thin films can be used,
7682657 Sequential chemical vapor deposition March 23, 2010
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the
7666773 Selective deposition of noble metal thin films February 23, 2010
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal,
7651873 Method relating to the accurate positioning of a semiconductor wafer January 26, 2010
Disclosed is a method involving repeatedly measuring a pressure within a flow of processing gas that is provided in a semiconductor processing apparatus for treatment of a semiconductor substrate, such as a semiconductor wafer. The flow of processing gas is made to extend between a s
7645486 Method of manufacturing a silicon dioxide layer January 12, 2010
The invention relates to a of manufacturing a silicon dioxide layer of low roughness, that includes depositing a layer of silicon dioxide over a substrate by a low pressure chemical vapor deposition (LPCVD) process, the deposition process employing simultaneously a flow of tetraethyl
7638170 Low resistivity metal carbonitride thin film deposition by atomic layer deposition December 29, 2009
Thermal atomic layer deposition processes are provided for growing low resistivity metal carbonitride thin films. Certain embodiments include methods for forming tantalum carbonitride (TaCN) thin films. In preferred embodiments, TaCN thin films with a resistivity of less than about 1000
7601223 Showerhead assembly and ALD methods October 13, 2009
An apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas exchange plate that is positioned within a reaction chamber having a platform. The gas exchange plate may be positioned above or below the platform and comprises a first plurality of pas
7563715 Method of producing thin films July 21, 2009
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently
7537662 Method and apparatus for depositing thin films on a surface May 26, 2009
A method and apparatus for depositing thin films onto a substrate is provided. The apparatus includes a gas injection structure that is positioned within a reaction chamber that has a platform. The gas injection structure may be positioned above or below the platform and comprises a
7498272 Method of depositing rare earth oxide thin films March 3, 2009
The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of
7494927 Method of growing electrical conductors February 24, 2009
A method for forming a conductive thin film includes depositing a metal oxide thin film on a substrate by an atomic layer deposition (ALD) process. The method further includes at least partially reducing the metal oxide thin film by exposing the metal oxide thin film to a reducing ag
7485340 Production of elemental films using a boron-containing reducing agent February 3, 2009
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises
7476420 Process for producing metal oxide films at low temperatures January 13, 2009
A process for producing metal oxide thin films on a substrate by the ALD method comprises the steps of bonding no more than about a molecular monolayer of a gaseous metal compound to a growth substrate, and converting the bonded metal compound to metal oxide. The bonded metal compoun
7427571 Reactor design for reduced particulate generation September 23, 2008
Particle formation in semiconductor fabrication process chambers is reduced by preventing condensation on the door plates that seal off the process chambers. Particles can be formed in a process chamber when reactant gases condense on the relatively cool surfaces of a door plate. Thi
7427329 Temperature control for single substrate semiconductor processing reactor September 23, 2008
A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing.
7426939 Rotatable valve September 23, 2008
A rotatable valve allows the flow of a fluid to be switched between at least two different paths by rotating an element within the valve. Advantageously, both the housing of the valve and the rotatable element within the housing are formed of glass, making the valve resistant to corr
7410671 Sequential chemical vapor deposition August 12, 2008
The present invention provides for sequential chemical vapor deposition by employing a reactor operated at low pressure, a pump to remove excess reactants, and a line to introduce gas into the reactor through a valve. A first reactant forms a monolayer on the part to be coated, while the
7405143 Method for fabricating a seed layer July 29, 2008
The present invention produces a seed layer for the deposition of copper for metallizing integrated circuits. A diffusion barrier is deposited upon the wafer. In one embodiment of the invention, a metal oxide layer is then formed on the diffusion barrier. The oxidized metal is then r
7356762 Method for the automatic generation of an interactive electronic equipment documentation package April 8, 2008
An interactive electronic equipment document production system is disclosed. Documents from different sources are standardized in a conversion process, provided with tags in a tagging process that provides information connecting an initial locating with another location and are evalu
7329590 Method for depositing nanolaminate thin films on sensitive surfaces February 12, 2008
The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the dep
7276774 Trench isolation structures for integrated circuits October 2, 2007
A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a mo
7273819 Method and apparatus for processing semiconductor substrates September 25, 2007
Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chamber from one end of the
7256375 Susceptor plate for high temperature heat treatment August 14, 2007
Susceptor plates are provided for high temperature (e.g., greater than 1000.degree. C.) batch processing of silicon wafers. The susceptor plates are designed to accommodate one wafer each, and a plurality of loaded susceptor plates are vertically spaced apart in a susceptor plate holder
7241677 Process for producing integrated circuits including reduction using gaseous organic compounds July 10, 2007
This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional g
7220669 Thin films for magnetic device May 22, 2007
Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monol
7220451 Process for producing metal thin films by ALD May 22, 2007
Electrically conductive noble metal thin films can be deposited on a substrate by atomic layer deposition. According to one embodiment of the invention a substrate with a surface is provided in a reaction chamber and a vaporised precursor of a noble metal is pulsed into the reaction
7144809 Production of elemental films using a boron-containing reducing agent December 5, 2006
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises
7108747 Method for growing oxide thin films containing barium and strontium September 19, 2006
The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films are made by the ALE technique by using as precursors for barium and strontium their cyclopentadienyl compounds. A thin film made by means
7105054 Method and apparatus of growing a thin film onto a substrate September 12, 2006
A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding
7104578 Two level end effector September 12, 2006
An end effector alternately (or simultaneously) transports susceptors and wafers. Separate contact surfaces are provided for wafer transport and for susceptor transport. In one embodiment, the wafer contact surface is spaced above the susceptor contact surface, and the susceptor is a pla
7102235 Conformal lining layers for damascene metallization September 5, 2006
Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary
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