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A G Processing Technologies, Inc. Patents
Assignee:
A G Processing Technologies, Inc.
Address:
Sunnyvale, CA
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
5326171 Pyrometer apparatus and method July 5, 1994
A method for sensing the temperature of a remote object within a chamber that is heated from outside the chamber, includes sensing radiation from the object within the chamber through a window in the wall of the chamber that exhibits different transmissivity than the wall of the chamber
5324684 Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced June 28, 1994
A technique for doping silicon material or other semiconductors uses gas phase dopant sources under reduced pressure in a radiantly heated, cold-wall reactor. The technique is applied to the automated integrated circuit manufacturing techniques being adopted in modern fabrication fac
5188458 Pyrometer apparatus and method February 23, 1993
Dual pyrometric detectors and method measure the temperature of a remote heated object in the presence of ambient radiation. One detector measures emitted radiation from both the remote object and from the environment, and the other detector measures radiation predominantly from the
5165796 Bichannel radiation detection apparatus November 24, 1992
Apparatus for optically determining the temperature of an object in an environment at elevated temperature provides enhanced measurement accuracy by sensing radiation from the object in two or more different wavebands of radiation. The information derived therefrom is cyclically sampled
5114242 Bichannel radiation detection method May 19, 1992
The system and method for pyrometrically determining the temperature of a semiconductor wafer within a processing chamber accurately determines the actual emissivity of the semiconductor wafer at a reference temperature using multiple pyrometers operating at different wavelengths. The
5061084 Pyrometer apparatus and method October 29, 1991
Dual pyrometric detectors and method measure the temperature of a remote heated object in the presence of ambient radiation. One detector measures emitted radiation from both the remote object and from the environment, and the other direction measures radiation predominantly from the
4989991 Emissivity calibration apparatus and method February 5, 1991
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in
4919542 Emissivity correction apparatus and method April 24, 1990
Radiation detectors and method measure the emissivity of a remote, heated semiconductor wafer in the presence of ambient radiation. Incident radiation within a selected waveband from a controlled source intermittently radiates the remote wafer, and reflected radiation therefrom is de
4854727 Emissivity calibration apparatus and method August 8, 1989
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in

 
 
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