| Patent Number |
Title Of Patent |
Date Issued |
| 7136173 |
Method and apparatus for end-point detection |
November 14, 2006 |
| An apparatus for detecting the end-point of an electropolishing process of a metal layer formed on a wafer (1004) includes an end-point detector. The end-point detector is disposed adjacent the nozzle (1008) used to electropolish the wafer. In one embodiment, the end-point detector is |
| 7119008 |
Integrating metal layers with ultra low-K dielectrics |
October 10, 2006 |
| In forming a layer of a semiconductor wafer, a dielectric layer is deposited on the semiconductor wafer. The dielectric layer includes material having a low dielectric constant. Recessed and non-recessed areas are formed in the dielectric layer. A metal layer is deposited on the diel |
| 6837984 |
Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
January 4, 2005 |
| An apparatus for electropolishing a wafer includes a wafer chuck and a stationary jet. The wafer chuck is configured to rotate and translate the wafer. The stationary jet is configured to apply an electrolyte to the wafer when the wafer is translated and rotated by the wafer chuck. |
| 6749728 |
Methods and apparatus for holding and positioning semiconductor workpieces during electropolishi |
June 15, 2004 |
| A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer |
| 6726823 |
Methods and apparatus for holding and positioning semiconductor workpieces during electropolishi |
April 27, 2004 |
| A wafer chuck assembly for holding a wafer during electroplating and/or electropolishing of the wafer includes a wafer chuck for receiving the wafer. The wafer chuck assembly also includes an actuator assembly for moving the wafer chuck between a first and a second position. When in the |
| 6638863 |
Electropolishing metal layers on wafers having trenches or vias with dummy structures |
October 28, 2003 |
| In electropolishing a metal layer on a semiconductor wafer, a dielectric layer is formed on the semiconductor wafer. The dielectric layer is formed with a recessed area and a non-recessed area. A plurality of dummy structures are formed within the recessed areas where the dummy structure |
| 6495007 |
Methods and apparatus for holding and positioning semiconductor workpieces during electropolishi |
December 17, 2002 |
| A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer |
| 6447668 |
Methods and apparatus for end-point detection |
September 10, 2002 |
| An apparatus for detecting the end-point of an electropolishing process of a metal layer formed on a wafer includes an end-point detector. The end-point detector is disposed adjacent the nozzle used to electropolish the wafer. In one embodiment, the end-point detector is configured to |
| 6440295 |
Method for electropolishing metal on semiconductor devices |
August 27, 2002 |
| An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the |
| 6395152 |
Methods and apparatus for electropolishing metal interconnections on semiconductor devices |
May 28, 2002 |
| An electropolishing apparatus for polishing a metal layer formed on a wafer (31) includes an electrolyte (34), a polishing receptacle (100), a wafer chuck (29), a fluid inlet (5, 7, 9), and at least one cathode (1, 2, 3). The wafer chuck (29) holds and positions the wafer (31) within the |
| 6391166 |
Plating apparatus and method |
May 21, 2002 |
| An apparatus for plating a conductive film directly on a substrate with a barrier layer on top includes anode rod (1) placed in tube (109), and anode rings (2), and (3) placed between cylindrical walls (107) and (105), (103) and (101), respectively. Anodes (1), (2), and (3) are powered b |
| 6248222 |
Methods and apparatus for holding and positioning semiconductor workpieces during electropolishi |
June 19, 2001 |
| A wafer chuck for holding a wafer during electropolishing and/or electroplating of the wafer includes a top section, a bottom section, and a spring member. In accordance with one aspect of the present invention, the top section and the bottom section are configured to receive the wafer |
