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ACCO Semiconductor, Inc. Patents
Assignee:
ACCO Semiconductor, Inc.
Address:
Sunnyvale, CA
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
8188540 High breakdown voltage double-gate semiconductor device May 29, 2012
A double-gate semiconductor device includes a MOS gate and a junction gate, in which the bias of the junction gate is a function of the gate voltage of the MOS gate. The breakdown voltage of the double-gate semiconductor device is the sum of the breakdown voltages of the MOS gate and
8179197 Electronic circuits including a MOSFET and a dual-gate JFET May 15, 2012
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel.
8159298 Linearization circuits and methods for power amplification April 17, 2012
Linearization circuits of the invention are used in conjunction with power amplification circuits that comprise a power amplifier core. Exemplary linearization circuits comprise a replica of the power amplifier core. In operation, the linearization produces an envelope signal from an
7969341 Sigma-delta modulator including truncation and applications thereof June 28, 2011
A multi-stage sigma-delta modulator including bit truncation between stages. The bit truncation reduces the number of bits that must be processed in subsequent stages and thus allows for faster response times. In some embodiments, the gain of a feedback loop is selected to compensate
7969243 Electronic circuits including a MOSFET and a dual-gate JFET June 28, 2011
Electronic circuits and methods are provided for various applications including signal amplification. An exemplary electronic circuit comprises a MOSFET and a dual-gate JFET in a cascode configuration. The dual-gate JFET includes top and bottom gates disposed above and below the channel.
7952431 Linearization circuits and methods for power amplification May 31, 2011
Linearization circuits of the invention are used in conjunction with power amplification circuits that comprise a power amplifier core. Exemplary linearization circuits comprise a replica of the power amplifier core. In operation, the linearization produces an envelope signal from an
7863645 High breakdown voltage double-gate semiconductor device January 4, 2011
A double-gate semiconductor device provides a high breakdown voltage allowing for a large excursion of the output voltage that is useful for power applications. The double-gate semiconductor device may be considered a double-gate device including a MOS gate and a junction gate, in wh
7808415 Sigma-delta modulator including truncation and applications thereof October 5, 2010
A multi-stage sigma-delta modulator including bit truncation between stages. The bit truncation reduces the number of bits that must be processed in subsequent stages and thus allows for faster response times. In some embodiments the gain of a feedback loop is selected to compensate

 
 
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