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AAdvanced Micro Devices, Inc. Patents
Assignee:
AAdvanced Micro Devices, Inc.
Address:
Sunnyvale, CA
No. of patents:
1
Patents:




Patent Number Title Of Patent Date Issued
6475892 Simplified method of patterning polysilicon gate in a semiconductor device November 5, 2002
Polysilicon gates are formed with greater accuracy and consistency by depositing a silicon carbide antireflective layer on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the silicon carbide layer in the same tool.

 
 
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