| |
 |
AAdvanced Micro Devices, Inc. Patents |
|
Assignee: AAdvanced Micro Devices, Inc.
Address: Sunnyvale, CA
No. of patents: 1
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 6475892 |
Simplified method of patterning polysilicon gate in a semiconductor device |
November 5, 2002 |
| Polysilicon gates are formed with greater accuracy and consistency by depositing a silicon carbide antireflective layer on the polysilicon layer before patterning. Embodiments also include depositing the polysilicon layer and the silicon carbide layer in the same tool. | |
|
|